| 摘要 |
PURPOSE:To realize the interconnection between a wiring part and a region to be interconnected by a method wherein an insulating film is destroyed after an energized beam has illuminated a part where the wiring part is connected to the region to be interconnected. CONSTITUTION:A YAG laser beam 12 illuminates a part where a poly-Si wiring part 9, which is formed through an oxide film 10 at an output part 6 of a CMOS inverter 5 formed on a thin-film Si layer 2, is interconnected to an underlayer drain region 7; the oxide film 10 is destroyed. During the illumination of this laser beam 12, the oxide film 10 is destroyed easily because it is thin. In addition, because poly-Si is melted, the mutual diffusion of an N<+> type impurity and a P-type impurity is promoted; the drain region 7 for P-channel MOS transistor 4 and an N-channel MOS transistor 3 is connected to the poly-Si wiring part 9. Accordingly, this method is useful if it is applied to the manufacture of a semiconductor device, such as a VLSI chip, which requires a high-density interconnection.
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