| 摘要 |
PURPOSE:To isolate the input and the output excellently, and to form a Hall element device in a monolithic manner by including a semiconductor Hall element detecting a magnetic field in the fixed direction and a wiring path causing currents to spirally flow through the periphery of the semiconductor Hall element and shaping a magnetic field in the direction of detection of the magnetic field. CONSTITUTION:When a voltage is applied between power input terminals VSS and VDD and a potential higher than a threshold level is applied at a gate input terminal VG, an n channel is formed between a source 3 and a drain 4, and currents flow. When currents are caused to flow through an input-signal wiring path 2 through input terminals VIA, VIB at that time, a magnetic field is generated in the direction vertical to a MOS type Hall element 1, currents between the source 3 and the drain 4 are subject to a Hall effect, and Hall voltage is generated between Hall-effect output terminals HA, HB. When a control pulse signal psiP is turned ON and currents are caused to flow through the MOS type Hall element 1, the Hall voltage proportional to currents flowing between the input terminal pair VIA, VIB is generated between HA and HB. The voltage is input to an amplifier 8 when a control pulse signal psiS is turned ON. The amplified signal is latched, and held as an output signal VO.
|
