Sense circuit for the state of matrix cells in MOS EPROM memories.

摘要

The matrix cells have their drains connected to a first preset load, and an identical selection voltage is applied to the gate of a chosen matrix cell and to the gates of two virgin reference cells with a second conductance load equal to double that of the first load, and the respective currents which cross the two cells are compared in a differential amplifier. Respective current generators are connected to inject in said first and said second load respective identical currents, each approximately equal to the difference between the current in the virgin cell and the current in the written cell.