| 摘要 |
PURPOSE:To obtain a uniform thin semiconductor film on a substrate by coating the wall of an apparatus with ceramics, thereby generating a uniform plasma in the electrode. CONSTITUTION:A high frequency power source 11 is connected to a high frequency applying electrode 1. Reaction gases 35-38 are introduced from the electrode 1 having a shower plate through flowmeters 31-34 into a reaction chamber 3. A glass substrate 4 with a transparent conductive film is secured to a substrate carrier 5, and heated by a heating plate 6 to a predetermined temperature. The wall of the chamber 3 is coated with ceramics, such as glass lining 7 of borosilicate glass, etc. Even if an insulator of the glass substrate or a conductor of the metal substrate is provided at the periphery of the electrode 1 by the glass lining, a uniform plasma can be maintained without disordering the plasma between the high frequency electrodes, thereby forming a uniform thin film on the substrate. |
