| 摘要 |
PURPOSE:To inhibit return-beam noises, to emit laser beams having small astigmatic difference and to enable low threshold current oscillation, in which reactive currents flowing on the outside of an active region are suppressed extremely, by making the width of an optical guide narrower than a central section in the vicinity of at least one resonator end surface and forming a buried layer by a II-VI compound semiconductor. CONSTITUTION:A II-VI compound semiconductor ZnSe buried layer 208 is shaped through an MOCVD method. A shaded part represents a II-VI compound semiconductor layer and a stripe at a central section a section in which a P-type GaAs contact layer 206 is exposed through etching. The width of an index waveguide and current injection width are brought to the same extent in the vicinity of resonator end-surfaces and an index waveguide mechanism is shaped, thus allowing stable single transverse mode oscillation, then emitting laser beams having extremely small astigmatic difference. On the other hand, the width of said index waveguide is made sufficiently wider than current injection width at the central section of a resonator and a gain waveguide mechanism is formed, thus allowing longitudinal multiaxis mode oscillation, then exceedingly inhibiting return-beam noises.
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