| 摘要 |
A sense circuit for sensing a memory state of a memory transistor in a semiconductor memory device by determining whether the memory transistor is on or off is provided. The sense circuit includes a first load P-channel MOS transistor for supplying a first current to the memory transistor, a reference transistor capable of passing a second current same in magnitude as the on current of the memory transistor, and a second load P-channel MOS transistor for supplying the second current to the reference transistor, whereby the second load P-channel MOS transistor is operatively coupled to the first load P-channel MOS transistor.
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