发明名称 REPLACING METHOD FOR DEFECTIVE CELL IN MEMORY DEVICE
摘要 PURPOSE:To relieve a defective cell by replacing an input/output signal line having a defective cell into an input/output signal line of a memory area not in use in a device using a small memory area in use in memory devices having two kinds or over of operating areas in one and same chip. CONSTITUTION:In connecting pads P1-P9 and leads L1-L9, the lead L2 of the pad P2 is not connected in the operating memory area M2 where a defective cell exists and the memory area B not in use is replaced. Thus, the defective cell is switched by the input/output line at each memory area while the area not in use is utilized effectively to relieve the defective cell simple.
申请公布号 JPS63142599(A) 申请公布日期 1988.06.14
申请号 JP19860289887 申请日期 1986.12.05
申请人 SONY CORP 发明人 NISHIMOTO YOSHITSUGU
分类号 G11C29/00;G11C11/34;G11C11/401;G11C11/409;G11C29/04;H01L27/10 主分类号 G11C29/00
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