| 摘要 |
PURPOSE:To obtain a resist having superior resolution and sensitivity for ultraviolet rays together with high resistance to O2 plasma by incorporating a specified polysilane in the resist. CONSTITUTION:Polysilane expressed by the formula is incorporated in a resist. In the formula, R1-R3 are methyl or phenyl group; R4-R8 are H atom or methyl group, but at least one of them is methyl group; n is a positive integer; m is zero or a positive integer. The used polysilane is pref. one having >=1X10<3> mol.wt. from the viewpoint of sensitivity and glass transition point of the polymer. If the mol.wt. is >=5X10<5>, disadvantage in the formation of fine pattern is resulted because of the higher tendency for causing swelling when it is developed. It is preferred from the viewpoint of resolution that the mol.wt. distribution is as near as possible to monodisperse distribution. Since better heat resistance and resolution of the resist are obtd. when the glass transition point of the polymer is as high as possible, it is preferred that the polymer has at least 50 deg.C glass transition point. |
