| 摘要 |
PURPOSE:To prevent the generation of wrinkle on the surface of a positive resist, by providing a process of removing an intermediate layer formed between PMMA and a positive resist by a method wherein PMMA is used for a lower resist, novolak resin system positive resist is used for an upper resist, PMMA is exposed to the radiation of far ultra-violet rays after development of the upper resist, and heat treatment is performed in an ozone atmosphere. CONSTITUTION:After a positive resist 1 is developed, PMMA 3 is exposed, in this state, to the radiation of far ultra-violet rays, and a PMMA exposed part 5 is formed. Then the semiconductor substrate is put in an ozone atmo sphere and is heated to remove an intermediate layer 2. After that, the exposed part 5 of PMMA is removed with monochlorobenzene. |
