| 摘要 |
PURPOSE:To prevent the characteristics of a semiconductor laser device from being deteriorated and the reliability from decreasing by selectively etching a first crystalline grown semiconductor layer to form a stripelike groove, exposing the layer including aluminum, and then forming a semiconductor layer including aluminum through a semiconductor layer which does not contain aluminum on the semiconductor substrate in second crystal growing step. CONSTITUTION:A buffer layer 2 and a current block layer 3 are sequentially grown on a substrate 1 by a first crystal growth. After the growth, a stripelike groove 10 is formed by photolithographic technique and etching. In the case of etching, the layer 2 is exposed. Thus, an oxygen-absorbed film 9 coupled with the aluminum is formed on the surface. Then, a buffer layer 4, a first clad layer 5, an active layer 6, a second clad layer 7 and a contact layer 8 are sequentially grown by a second crystal growth. Here, before the layer 5 made of P-type Al0.43Ga0.57As is grown on the layer 2, the layer 4 made of P-type GaAs is grown. Accordingly, the formation of a high resistance layer on the crystal growing boundary can be suppressed.
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