摘要 |
PURPOSE:To prevent to produce an area of the failure of ion implantation even though a target has an uneven surface, by furnishing two systems of ion sources to radiate ion beams from the opposite directions respectively to the same target in the angle to prevent a channeling. CONSTITUTION:Only necessary ion beams are selected by analysis magnets 14a and 14b from ion beams 13a and 13b which are drawn out from ion sources 11a and 11b, and led to ion beam chambers 15a and 15b. Furthermore, while the ion beams 13a and 13b are rotated by a disk motor 18, they are radiated to targets 17a and 17b fixed to a disk 16 which is moved up and down by a screw 20. In this case, since the radiation angles of the ion beams 13a and 13b to the targets 17a and 17b are about +7 deg. and -7 deg., the influence of a channeling is never given, and the ion beams can be radiated to all over the surface even to an uneven target.
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