| 摘要 |
PURPOSE:To eliminate a heat treatment in an extra-high vacuum or a heat treatment in an H2 atmosphere at a high temperature and facilitate forming an Si epitaxial film at a low temperature by a method wherein a Ge epitaxial film is formed on a semiconductor substrate of Si or the like and an epitaxial film of Si or the like is formed on the Ge film surface. CONSTITUTION:At first, a Ge epitaxial film 12 is formed on a semiconductor substrate 13. At that time, an oxide film 14 on the substrate 13 reacts with Ge system gas supplied under a temperature as low as about 400 deg.C and GeO is produced and evaporated from the surface of the substrate 13 so that a clean surface of Si or the like can be obtained easily. As soon as the clean surface is obtained, the epitaxial growth of Ge starts automatically. After a Ge film is formed, a Ge oxide film is formed on the Ge surface and obstructs the epitaxial growth of Si. However, if a heat treatment is performed at a tempera ture as low as about 400 deg.C, the Ge oxide film is volatilized so that the clean surface of Ge can be obtained easily. Therefore, supplied Si or the like can be made to grow on the Ge film by epitaxy easily. With this constitution, the epitaxial growth film 15 of Si or the like can be easily formed at a low tempera ture.
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