| 摘要 |
PURPOSE:To make the speed of etching constant, and to perform a uniform etching treatment by a method wherein the substrate to be treated is heated up or cooled down by innert gas before performance of an etching treatment, and the etching treatment is started after the substrate to be treated has been maintained at a fixed temperature. CONSTITUTION:When a wafer 3 is placed on a lower electrode 5, the temperature in a reaction chamber 4 is measured from outside a reaction container 2 by a noncontact type wafer temperature detecting part 24, and the temperature of the wafer 3 is detected. The detected temperature value is outputted to a treatment part 25. A cooling device 35, a heating device 36 and a flow-passage switching device 37 are controlled by the treatment part 25 in accordance with said temperature information. To be more precise, when the temperature is higher than the standard temperature set in advance, cooled innert gas is supplied to the wafer 3. On the other hand, when the temperature of the wafer 3 is lower than the standard temperature, heated innert gas is supplied. As a result, the wafer 3 can be maintained at a fixed temperature before the etching treatment is performed.
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