发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To speedily write and read data to and from each memory cell and to shorten a testing time by simultaneously operating all plural blocks in each active cycle in a test mode. CONSTITUTION:A decoder circuit 10 constituted of 1st and 2nd circuits is provided. A driving signal outputted from a 1st decoder circuit is given to the sense amplifier of a memory cell array block corresponding to a row address RA8=1, while a driving signal obtained from a 2nd decoder circuit is given to the sense amplifier of a memory cell array block corresponding to a row address RA8=0. Thus, the sense amplifiers are activated in the test mode together with the blocks with the row addresses RA8=0 and RA8=1. Accordingly, all bits can be read out and written with a half of the number of cycles in a normal mode, thereby shortening the testing time.
申请公布号 JPS63140498(A) 申请公布日期 1988.06.13
申请号 JP19860287335 申请日期 1986.12.01
申请人 MITSUBISHI ELECTRIC CORP 发明人 KUMANOTANI MASAKI;HIDAKA HIDETO;KONISHI YASUHIRO;YAMAZAKI HIROYUKI;DOSAKA KATSUMI;IKEDA ISATO;TSUKAMOTO KAZUHIRO;MIYATAKE HIDEJI;SHIMODA MASAKI
分类号 G11C29/00;G11C11/34;G11C11/401;G11C29/34 主分类号 G11C29/00
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