| 摘要 |
<p>PURPOSE:To reduce distortion due to the difference of thermal expansion coefficient between a metallic heat sink and a semiconductor substrate, and prevent a semiconductor chip from warping, by forming divided semiconductor substrates on the heat sink. CONSTITUTION:A semiconductor substrate is divided in the following manner; firstly a metallic heat sink 1 is formed on the whole rear surface of the semiconductor substrate, and then the substrate is etched at portions where grooves 21 are formed to divide the substrate. In a high output GaAs FET, for example, formed in the above mentioned manner, distortion due to the difference of thermal expansion coefficient between the heat sink 1 and the semiconductor substrate 20 is reduced, and the warp of a semiconductor chip is dissolved when the chip is mounted on a circuit. Therefore the whole rear surface of the semiconductor chip is uniformly fixed to the metal base 7 of the circuit with solder 6, and the superior heat dissipation effect of a device can be realized.</p> |
