| 摘要 |
PURPOSE:To maintain good selectivity and to form a thin metallic film at a high speed and good reproducibility by substantially heating only the part to be subjected to vapor deposition at the time of forming the thin metallic film on a substrate by the vapor deposition using gaseous metal halide and gaseous hydrogen. CONSTITUTION:The inside of a reaction vessel 8 is evacuated to a vacuum and gaseous H2 is introduced into the vessel, then a halogen lamp 7 is lighted to heat a silicon wafer 12 with a contact hole at the time of forming W only in the contact hole part of the wafer 12 and filling the hole. The parts such as the inside wall of the reaction vessel, a substrate support 13 and gas introducing pipe, except the part of the wafer 12 exposed to the gaseous raw material, are kept cooled at this time. WF6 is introduced into the vessel 8 and is brought into reaction of the prescribed time the wafer 12 is heated to about 550 deg.C. The supply of the respective gases is then stopped and the lamp 7 is put out to stop heating the wafer 12. The remaining gases are discharged from the vessel and the wafer 12 is cooled and taken out. The W is formed only in the contact hole part of the wafer 12.
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