| 摘要 |
PURPOSE:To dispense with complex treatment with reference to the apparatus without causing decrease of throughput, to prevent occurrence of unevenness of development due to elevation of temp. of a resist and to improve the precision for working of a pattern by irradiating the before the development at below the glass transition temp. of the resist. CONSTITUTION:When alpha and beta-position on a resist 12 having holes 13 on a substrate 11 are irradiated with electron beams 14, 15, the distribution of the holes 13 in the alpha and beta-position are changed remarkably. Then, the resist 12 is annealed until the distribution of holes 13 becomes uniform (for >=20min) at the temp. within a range between the glass transition temp. (Tg: -20 deg.C) and Tg+ or -10 deg.C. By this method, the distribution of hole becomes uniform, and almost no unevenness of development is caused if it is developed thereafter. |
