发明名称 DIODE TYPE HUMIDITY SENSOR
摘要 PURPOSE:To achieve the labor saving, miniaturization and reduction in power consumption of a sensor, by forming a SiO2-layer between a membrane composed of a ZnO-layer and an upper electrode in a membrane form composed of a Schottky connectable metal alone or an alloy thereof. CONSTITUTION:Cr and Au are successively laminated to a glass substrate to form a lower electrode 2 and a ZnO-layer 3 in a membrane form is formed on said electrode 2. Subsequently, a SiO2-layer 4 is formed thereon in a membrane form and, further, an upper electrode 5 composed of a metal alone possible in the Schottky connection with the ZnO-layer 3 or an alloy thereof is formed on said SiO2-layer 4 in a membrane form. Then, by applying predetermined voltage between these electrodes, humidity can be measured from the change in ion conductivity through the water getting into the respective gaps between the membrane of the ZnO-layer 3, the membrane of the upper electrode 5 and the SiO2-layer 4 present therebetween. By this method, operation for drying moisture by refresh due to high temp. is not required and, since the membranes are used, the labor saving, miniaturization and reduction in power consumption of an apparatus can be achieved.
申请公布号 JPS63139241(A) 申请公布日期 1988.06.11
申请号 JP19860286053 申请日期 1986.12.02
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 MOGI KAZUO;TSURUMI SHIGEYUKI;NODA JUICHI
分类号 G01N27/12 主分类号 G01N27/12
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