发明名称 PLASMA CVD DEVICE
摘要 PURPOSE:To lower the treating temp. of a substrate and to grow a desired reaction product by providing an ion source for ionizing introduced gases to an introducing part for introducing a gaseous raw material and introducing part for introducing a reaction gas into a reduced pressure vessel. CONSTITUTION:A diluting gas, the gaseous raw material and the reactive gas are respectively introduced from pipings, 6, 7, 8 into a vacuum vessel 1 and a glow discharge is generated between the substrate 3 and the vessel 1 to to grow the reaction product in a vapor phase on the substrate 3. The ion source device 9 is provided to the introducing part of the gaseous raw material and/or the introducing part of the reaction gas to previously ionize the gaseous raw material and the reaction gas. This ion source device 9 is so constituted that thermoelectrons are emitted from a coil 11 connected to an AC power source 10 and are arc-discharged toward an electrode 31 on an anode side of a DC power source 12. The ionization rate of the introduced gases is thereby increased and the treating temp. of the substrate 3 can be lowered.
申请公布号 JPS63140087(A) 申请公布日期 1988.06.11
申请号 JP19860287389 申请日期 1986.12.02
申请人 ISHIKAWAJIMA HARIMA HEAVY IND CO LTD 发明人 ENDO SETSUO
分类号 C23C16/50 主分类号 C23C16/50
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