| 摘要 |
PURPOSE:To improve the quality and enable the device surface to be planarized by depositing an insulating film on the whole substrate to the thickness of a metallic film by the use of an ECR plasma CVD method, and removing the insulating film on a resist film along with the resist film. CONSTITUTION:A title method comprises at least a process (a) for forming an electrode material metallic film 2 on the whole surface of a compound semiconductor substrate 1, a process (b) for forming a resist film 3 in a region the metallic film 2 where an electrode is to be formed, a process (c) for removing the metallic film 2 in the region which is not covered with the resist film 3, a process (d) for implanting an impurity into the region stripped of the metal, and a process (f) for annealing the substrate 1. In this, a process (d) for depositing an insulating film 7 on the whole substrate 1 to the thickness of the metallic film 2 by the use of an ECR plasma CVD method with the resist film 3 being left and a process (e) for removing the insulating film 7 on a resist film 8 along with the resist film 8 are provided. With this, the protection off the compound semiconductor substrate 1 in the annealing process and the planarization of the surface of the completed semiconductor device can simultaneously be accomplished.
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