MANUFACTURE OF HETERO JUNCTION BIPOLAR TRANSISTOR

摘要

PURPOSE:To facilitate processes markedly by a method wherein a fine collector as well as an emitter and an emitter electrode are formed in self alignment using the same mask. CONSTITUTION:A temporary emitter 13 is removed by etching process to expose a cap layer 6a of emitter forming a recession 15. First, an emitter electrode metal is formed by evaporation and lift off process. Second, hydrogen ion is implanted in a layer 3 using an emitter electrode 8 as a mask to form a collector while an outer region 3b below the emitter electrode 8 is semiinsulated to form a fine collector region 3a in substantially the sane size as that of emitter electrode 8. Through these procedures, the processes can be facilitated markedly to improve the yield thereof notably.