| 摘要 |
PURPOSE:To remove limitation in the selection of a wiring material, and to control an upper layer wiring to a precise shape by forming a 'cavity' in the upper layer wiring by an inorganic insulating material such as an Si3N4 layer shaped through a plasma CVD method. CONSTITUTION:A first process (a) in which first inorganic insulating material layers 14 are shaped in regions except the upper surfaces of lower layer wirings 11, 12 through an ECR plasma CVD method on a substrate 13 on which the lower layer wirings 11, 12 are formed is provided. A second process (b) in which a second inorganic insulating material layer 15 is shaped in a predetermined region on the first inorganic insulating material layer 14 through a plasma CVD method, third processes (c)-(e) in which an upper layer wiring 17 passing on at least the second inorganic insulating material layer 15 is formed, and a fourth process (f) in which the second inorganic insulating material layer 15 is removed are furnished. Si3N4 is used as the representative inorganic insulating materials 14, 15. Accordingly, when an air bridge is shaped, the material of the upper layer wirings 14, 15 is not limited, and the wirings are not contaminated.
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