发明名称 VAPOR GROWTH APPARATUS
摘要 PURPOSE:To prevent a leakage from occurring in the sample preparation chamber and the reaction tube by placing the sample preparation chamber between the reaction chamber and the raw material gas introducing part, and performing the sample conveyance through the sample preparation chamber at the times of initiating and completing an epitaxial growth, thereby preventing the contamination of the sample under conveyance. CONSTITUTION:A sample preparation chamber 102 provided with an evacuation system is placed between a reaction tube 104 for performing an epitaxial growth and a raw material gas introducing part, and at the times of initiating and completing the epitaxial growth, the sample conveyance is performed through the sample preparation chamber 102. A sample travels from the preparation chamber 102 to the position of an induction heating coil 111, but, since gas decomposition products exist only downstream of the induction beating coil 111, no gas decomposition product exists in the area in which the sample travels. For this, no gas decomposition product adheres, so a good growth can always be conducted. With this, even if the growth is repeated, no dust adheres to the sample surface, so a good reproducibility is obtained.
申请公布号 JPS63138723(A) 申请公布日期 1988.06.10
申请号 JP19860286482 申请日期 1986.12.01
申请人 SEIKO EPSON CORP 发明人 TAKAMURA TAKASHI
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
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