SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevent an Si breaking off due to the stress in the case of cutting from occuring by a method wherein gaps are made between a cathode Al electrode and surface passivation films eliminating any overlap thereof. CONSTITUTION:Gaps 4 are made between a cathode Al electrode 1 and surface passivation films 3 along the contour of cathode pattern. Through these procedures, the cathode Al cut by cutting tool trimming can escape to the gaps 4 to prevent the cathode part as well as the surface passivation films 3 from breaking off.