| 摘要 |
PURPOSE:To obtain an electrode without causing the breaking of wire during baking in the succeeding stage by specifying a substrate temp. at the time of forming film when a transparent conductive film consisting essentially of tin oxide is formed on the glass substrate by CVD. CONSTITUTION:The glass substrate is heated to 600-630 deg.C, and a transparent conductive film consisting essentially of tin oxide is formed on the substrate by CVD. By this method, when the obtained transparent conductive film is used as the electrode of a cover plate of the AC type plasma display and the insulating layer coating the electrode is baked at about 600 deg.C, the breaking of wire of the electrode is obviated, since the substrate temp. during the film formation is made higher than the baking temp.
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