| 摘要 |
PURPOSE:To reduce the occupying area readily, by arranging semiconductor layers of a CMOS inverter continuously and orthogonally at a PMOSFET and an NMOSFET so that source and drain regions of a transfer gate and the drain of the NMOSFET are commonly used. CONSTITUTION:A semiconductor layer 2 has a CMOS inverter region and a transfer gate region. In the CMOS inverter, a semiconductor layer 2a having a pattern width l1 is used for a PMOSFET, and a semiconductor layer 2b having a pattern width l1 is used for an NMOSFET. The MOSFETs are intersected at a right angle and form the continuous semiconductor layer. In the NMOSFET, a semiconductor layer region 13sd becomes source and drain regions, which can be connected to bit lines with an extending part 2c. The output part of the CMOS inverter is arranged at a position, which can be readily continued to the transfer gate. The region 13sd is formed in continuation with said output part of the CMOS inverter. The source and drain regions of the transfer gate are commonly used as the drain of the NMOSFET. |
