发明名称 METHOD FOR CONTACT EXPOSURE
摘要 PURPOSE:To easily form a sufficiently close-contact condition between a mask and a wafer by a method wherein the first vent group for the center part of the wafer and the second vent group for the circumferential part of the wafer are provided on the main part of the wafer chuck, and the operation by each vent group is controlled independently. CONSTITUTION:On the wafer chuck main body 12, the first vent group 10a to be used for flowout and sucking of the center part of a semiconductor wafer 12 and the second vent group 10b to be used for flowout and sucking of the circumferential part of the wafer 12 are provided. A light source to be used for exposure, which is not shown in the diagram, is arranged above the mask 14 for exposure which will be used for close-contact and isolation of the wafer 12, and it is made to irradiate on the photoresist material through the intermediary of the mask 14. When the wafer 12 is going to be close-contacted to the mask 14 for exposure, a blow-up and close-contact operation has priority to the blow-up and close-contact operation to be performed through the intermediary of the second vent group 10b.
申请公布号 JPS59155131(A) 申请公布日期 1984.09.04
申请号 JP19840005563 申请日期 1984.01.18
申请人 HITACHI SEISAKUSHO KK 发明人 NISHIZUKA HIROSHI;KOMORIYA SUSUMU;YOSHIDA KIYOSHI;MAEJIMA HIROSHI
分类号 G03F7/20;H01L21/027;(IPC1-7):H01L21/30 主分类号 G03F7/20
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