| 摘要 |
PURPOSE:To increase the film thickness of tunnel oxide films, and to manufacture the oxide films easily by forming titanium silicide layers on sections, in which charges are taken in and out among a floating gate electrode and first and second gate insulating films or other insulating films, while being brought into contact with the insulating films. CONSTITUTION:An Si oxide film 4 as a first gate insulating film is shaped on a drain region 12 in the surface of a single crystal Si substrate 2, the film of a section 4a in which charges are taken in and out is brought to 200-300Angstrom . A titanium film 20 in approximately 500Angstrom is formed on the film 4, and a floating gate electrode is shaped onto the film 20 by polycrystalline Si. An inter-layer oxide film 8 as a second gate insulating film through the oxidation of an Si layer 6 is formed on the electrode 6, and a control gate electrode 10 is shaped on the oxide film 8 by a polycrystalline Si layer. When the device is thermally treated, the layer 20 is converted a silicide, and the projection 22 of a titanium silicide is formed in the oxide film 4. Accordingly, tunnel currents are easy to flow. |
