| 摘要 |
<p>PURPOSE:To use a laser light source of high coherence and to attain a high resolution by providing a light diffusing film in the aperture part of a light absorbing film worked into a mask pattern. CONSTITUTION:A mask for photolithography has a light absorbing film 3 formed on a glass substrate 1, and this light absorbing film 3 is worked into the mask pattern. For the purpose of producing this mask, the glass substrate 1 is set in a plasma polymerizer having an evaporation source 6, and fine raw material particles are evaporated from the evaporation source 6 simultaneously with formation of a high polymer film on the glass substrate 1 by plasma polymerization to form a light diffusing film 2 where fine particles are dispersed in the high polymer film, and thereafter, the light absorbing film 2 is formed on the light diffusing film 2 and is worked into the mask pattern. In this case, no speckle patterns occur in the image forming position because the laser light of high coherence incident on the mask is diffused by the light diffusing film 2, and a high resolution is obtained because the principal part of the diffused light is made incident within the pupil angle.</p> |
