| 摘要 |
PURPOSE:To increase the rate of film formation and to enable the mass production of elements requiring a large film thickness, by decomposing a specified Si-contg. gas and a specified C-contg. gas so as to deposit amorphous SiC on a substrate. CONSTITUTION:An electrically conductive cylindrical substrate 17 of Al or the like for forming a film is placed in the reaction tube 15 of a glow discharge decomposition apparatus, and gaseous SinH2n+2 (n>=2), gaseous C2H2, gaseous B2H6 and gaseous H2 are fed from tanks 1-4 to the reaction tube 15 at a prescribed flow rate. The pressure of the gases, the temp. of the substrate 17 and the quantity of high frequency power are properly set, glow discharge is caused to decompose the gases and an amorphous SiC film contg. B is formed on the substrate 17 at a high rate. Even when other chemical vapor growth method such as photo-CVD or microwave plasma CVD is adopted as a film forming means, a similar effect can be produced. |
