发明名称 FORMING METHOD OF THIN-FILM
摘要 PURPOSE:To form a thin-film having high uniformity and high quality by connecting a transference electrode at one end of a plasma discharge electrode through a jig when the thin-film is shaped onto a substrate with a transparent conductive film through plasma discharge. CONSTITUTION:A plasma discharge device forming laminated films for a target such as a hole blocking layer 21, a photoconductive film 22, a beam blocking layer 23, etc., onto a face plate 2 as a substrate for the target to which a NESA film 7 is shaped consists of an electrode 3, which is mounted to a susceptor 1 section and has a pawl section 3a holding and fixing the plate 2, and an electrode 4 oppositely arranged to the electrode 3, and the whole device is brought to a vacuum state. When forming the conductive film 22, the mesa film 7 side of the plate 2 is directed toward the pawl section 3a side of the electrode 3, and fitted through a mask 5. A leaf spring 6 is interposed between the plate 2 and the susceptor 1, and the plate 2 is energized and fastened to the electrode 3 side. Accordingly, the electrode 3 and the mesa film 7 are conducted, plasma discharge can be conducted equally, and the conductive film having high uniformity can be shaped.
申请公布号 JPS63137483(A) 申请公布日期 1988.06.09
申请号 JP19860285144 申请日期 1986.11.29
申请人 SONY CORP 发明人 YANO MICHIHISA;SATO MANABU;SAITO HITOSHI
分类号 H01L31/0248;H01J9/233;H01L21/205;H01L31/08 主分类号 H01L31/0248
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