| 摘要 |
PURPOSE:To contrive to reduce the dark current of the titled device by a method wherein width of a transparent electrode is made as to be width of the light receiving part of the sensor. CONSTITUTION:A stripe type transparent electrode 21 is provided on a transparent insulating substrate 20, and a transparent insulating film 23 to act as a hole obstructing layer is provided on the electrode 21 thereof and on the surface of the substrate in the neighborhood of the electrode thereof. Then a high resistance amorphous Si layer 24 having resistivity of 10<9>OMEGA-cm or more is provided on the film 23 thereof. P type amorphous Si layes 25 having resistivity of 10<4>OMEGA-cm or more and 10<9>OMEGA-cm or less, and to act as obstructing layers to electrons are provided for the plural number of pieces separating mutually on the layer 24 thereof. Metal electrodes 26 of the plural number of pieces are provided on the layers 25 thereof. Signal light 27 is received from the under side of the substrate 20. By constructing an image sensor in such a way, leakage current is reduced drastically, and favorable read characteristic can be displayed. |
