| 摘要 |
PURPOSE:To make the crystalline property of an Si single crystal thin film excellent and to implement low defect density as a result of it, by forming an amorphous film from a first Si single crystal thin film layer by an ion implantation method, and performing a solid growing step twice at a high temperature. CONSTITUTION:An oxide single crystal thin film 2 is formed on an Si single crystal substrate 1. Then the substrate 1 is oxidized at high temperature, and a thermal oxide film 3 is formed between the substrate 1 and the film 2. Then an Si single crystal thin film 5 is formed on the film 3 by a vapor growth method. Si ions are implanted in the film 5. An amorphous Si layer 7 is formed in the vicinity of the interface between the film 2 and the film 5. Then solid growth is performed at high temperature, and the layer 7 is transformed into an Si single crystal thin film 51 having excellent low-defect density. Then Si ions are implanted into the film 51, and the amorphous Si layer 8 is formed in the vicinity of the surface of the film 51. Thereafter high temperature heat treatment is performed, and an Si single crystal thin film 52 having an excellent crystal structure is formed. When an Si single crystal thin film is formed by a homogeneous epitaxial gowing method with the film 52 as a seed crystal, a semiconductor substrate having an Si single crystal film 6 characterized by excellent crystalline property is obtained.
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