| 摘要 |
PURPOSE:To prevent abnormal yielding of a crystal at the peripheral parts of a substrate when slanted type liquid phase epitaxial growing is performed, by providing crystal thin films composed of the same material as that of the substrate at the periphery of a substrate holder beforehand. CONSTITUTION:A substrate supporting tool 13 composed of cylindrical quartz, in which a recess part 12 is provided by cutting at the central part, is provided so as to contact with a heat resisting quartz tube 11 having a bottom. An epitaxially growing substrate 15 composed of CdTe is mounted on a substrate holder 14 in the recess part 12 along the central axis of the supporting tool 13 so that the substrate is contacted with facing surfaces 16A and 16B with the recess part 12 in-between. The holder 14 is formed by using substrate composed of sapphire or the like. Crystal layers comprising the same material as that of the epitaxial growing substrate 15 are deposited on the peripheral parts 14A on both sides of the holder, which are not contacted with the supporting tool 13, by a sputtering method and the like beforehand. A epitaxially growing melt 18 composed of Hg, Cd and Te is contained at the lower part of the holder 14. The melt 18 is fused and the device is rotated in the direction B. The substrate is contacted with the melt and the temperature is decrased. Thus an epitaxial layer is formed. At this time abnormal epitaxial growing is yielded on the CdTe crystal layers 17 at the peripheries of the holder 14. The epitaxial layer having the uniform thickness along the entire surface is obtained on the substrate 15.
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