| 摘要 |
PURPOSE:To obtain the surface covering structure of electronic parts, which is excellent in its brazing property and causes no gap corrosion nor deterioration of hermetic sealing, by layering and covering a first metal layer to which main component is Co and a second metal layer consisting essentially of Pt, to the surface of a metallized metal layer on an insulating base body. CONSTITUTION:A chip carrier for housing a semiconductor integrated circuit element 6 is constituted of a base body 1 and a cover body consisting of an insulating material. As for the base body 1, a metallized metal layer 2 consisting of powder of W, Mo, etc., is formed in a necessary part of the surface, and also, the first metallic layer 3 consisting essentially of Co and a second metallic layer 4 consisting essentially of Pt are laminated. On the upper face of an insulating seal ring 8 attached to the base body 1, as well, a metallized metal layer 2a and the first and the second metal layers 3a, 4a are laminated by the same method. To the upper face of the metal layer 4a, a cover body 5 plating a copal with Au is attached through the brazing filler metal of an Au-Sn alloy. In such a way, the surface covering structure of desired electronic parts is realized. |
