| 摘要 |
PURPOSE:To enable to perform a taper etching without having damage on a substrate and deterioration in processing accuracy by a method wherein the first film consisting of inorganic substance is provided on the substrate having an uneven surface, the edge part of the uneven section is made into tapered form by performing an etching thereon using a sputtering etching method. CONSTITUTION:The contact hole with a steep side wall is formed by performing a selective etching on an SiO2 film 16. A resist 17 is removed, and an Si3N4 film 18 is coated on the whole surface by performing a CVD method. Then, when a sputtering etching is performed on a sample, the uneven part is etched faster than the other part, and the edge section of the uneven part is made into tapered form. When a silicon nitride film 18 is removed by etching, the contact hole is formed in such a manner that its upper part on the side wall has tapered form, and when an Al alloy film 19 is coated on the whole surface, said Al alloy film 19 is formed in tapered form in the contact hole. |
