| 摘要 |
PURPOSE:To keep OFF and ON resistances constant, and to increase the area of a display unit by forming a gate insulating layer, an a-Si semiconductor film having a shape that the semiconductor film is self-aligned with a gate electrode and a contact film onto the gate electrode consisting of an opaque metal and shaping a protective insulating film between the semiconductor film and the contact film. CONSTITUTION:A gate electrode 2 composed of Ta, etc., is laminated onto an insulating substrate 1. A gate insulating layer 3, an a-Si semiconductor layer 4 and a protective insulating film 5 are laminated onto the whole surface. An N<+> type a-Si layer 6A and a positive type photo-resist layer 10A are laminated onto the film 5. Exposure is executed from the substrate 1 side, and a resist 10 having a shape that the resist 10 is self-joined with the electrode 2 is shaped onto the layer 6A, using the gate electrode 2 as a photo-mask. Layers 6A, 4A are etched, employing the resist 10 as a mask, and an N<+> type a-Si layer 6B having a shape that the layer 6B is self-aligned with the electrode 2 and the active layer 4 are formed. The resist 10 is removed. A metal 8A and a resist layer 11 are laminated onto the whole surface, and the layers 8A, 6B are etched, using the layer 11 as a mask to form a source region 6, a drain region 7, a source electrode 8 and a drain electrode 9. |
