| 摘要 |
PURPOSE:To facilitate the control of the quality of an amorphous (a-)SiC film and the handling of gaseous starting materials as well as to increase the rate of film formation, by adopting specified gases as an Si-contg. gas and C-contg. gases. CONSTITUTION:An electrically conductive cylindrical substrate 17 of Al or the like for forming a film is placed in the reaction tube 15 of a glow discharge decomposition device, and gaseous SixH2x+2 (x>=2), gaseous C2H2 and gaseous CmHn (m>=1 and n>=4), gaseous C2H6 and gaseous H2 are fed from tanks 1-4 to the reaction tube 15 at a prescribed flow rate. The pressure of the gases, the temp. of the substrate 17 and the quantity of high frequency power are properly set, glow discharge is caused to decompose the gases and an a-SiC film contg. B is formed on the substrate 17 at a high rate. By this method, the rate of film formation is further increased and the explosive decomposition of C2H2 under high pressure can be weakened to facilitate the handling of the reactive geses. The decomposability of the C-contg. gases is controlled and an a-SiC film having desired characteristics can be obtd. |
