发明名称 MANUFACTURE APPARATUS OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent attachment of white powder to a dispersing head, by providing a storage tank for liquified carrier gas, and a thermostatic chamber and a flow-rate regulator, which keep vapor pressure constant. CONSTITUTION:Liquid gas, whose temperature is -180 deg.C or less, is supplied to a thermostatic chamber 3 from a liquid storage tank 1 through a pipe 2. The quantity of the liquid in the chamber 3 is regulated with a liquid level sensor 4 and a valve 5. The temperature of the liquified gas in the chamber is kept constant with a liquid thermometer 6 and a temperature regulator 7. Carrier gas gassified in the chamber 3 flows through a pipe 8, and the flow rate is regulated with a flow-rate regulator 9. The carrier gas is mixed with reacting gas in a dispersing head 11 through a pipe 10. The mixed gas is jetted through ports 12 and 13 at low temperature. In this constitution, when the reacting gas is suitably cooled with the low temperature carrier gas and vapor phase reaction in the vicinity of the dispersing head 11 is suppressed, attachment of white powder to the head 11 can be prevented.
申请公布号 JPS63137432(A) 申请公布日期 1988.06.09
申请号 JP19860284632 申请日期 1986.11.29
申请人 NEC CORP 发明人 TOMIYAMA TOMOHIKO
分类号 H01L21/31;H01L21/205 主分类号 H01L21/31
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