发明名称 |
AMORPHOUS SILICON PHOTORECEPTOR |
摘要 |
An amorphous silicon (a-Si) photoreceptor includes an amorphous silicon (a-Si) photoconductive layer, and a surface layer disposed above the amorphous silicon (a-Si) photoconductive layer. An intermediate layer is disposed between the amorphous-silicon (a-Si) photoconductive layer and the surface layer to ensure the energy level matching. The intermediate layer is made of amorphous silicon (a-Si) doped with nitrogen and boron so as to have the energy difference of less than 0.2 eV between the bottom of the conduction bands of the surface layer and the intermediate layer. |
申请公布号 |
DE3470966(D1) |
申请公布日期 |
1988.06.09 |
申请号 |
DE19843470966 |
申请日期 |
1984.10.12 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
NOJIMA, HIDEO;KOJIMA, YOSHIMI;IMADA, EIJI;MATSUYAMA, TOSHIRO;HAYAKAWA, TAKASHI;NARIKAWA, SHIRO;EHARA, SHAW |
分类号 |
G03G5/08;G03G5/082;G03G5/14;H01L31/09;(IPC1-7):G03G5/082;H01L31/02 |
主分类号 |
G03G5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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