| 摘要 |
PURPOSE:To obtain a physically and chemically stable thin Al film when a thin Al film is vapor-deposited on the surface of a substrate placed in vacuum, by radiating ions of an inert gas or the like having small energy on the surface of the substrate under prescribed conditions during the vapor deposition of Al. CONSTITUTION:While ions of an inert gas of Al having 100-1,000eV energy are radiated on the surface of a substrate placed in vacuum, Al is evaporated to form a thin Al film on the surface of the substrate. The ions are radiated at 0-60 deg. incident angle by 0.5-30% of the amt. of Al atoms deposited on the substrate. The substrate is kept at room temp.-300 deg.C.
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