发明名称 CMOS INTEGRATED CIRCUIT
摘要 PURPOSE:To remove an unnecessary current which flows in the CMOS part of an output stage and to reduce malfunction by providing a pre-stage P channel circuit, a pre-stage N channel circuit, a post-stage P channel MOSFET and a post stage N channel MOSFET. CONSTITUTION:A DC power source 1 is connected in parallel with a series connection form consisting of a P channel MOSFET 2, a resistance 9 and an N channel MOSFET 3 and a series connection form (a joining point is an output terminal 6) consisting of the P channel MOSFET 4 and the N channel MOSFET 5. And the drain 10 of the P channel MOSFET 2 is connected to the gate of the P channel MOSFET 4, the drain 11 of the N channel MOSFET 3 is connected to the gate of the N channel MOSFET 5, and then the gate of the P channel MOSFET 2 and the gate of the N channel MOSFET 3 are connected to an input terminal 8. Thus, the unnecessary current which flows the CMOS part of the output stage is removed, so that the trouble such as the malfunction and becoming an electromagnetic wave source including other IC can be reduced.
申请公布号 JPS63136823(A) 申请公布日期 1988.06.09
申请号 JP19860284763 申请日期 1986.11.28
申请人 NEC CORP 发明人 OHASHI IKUO
分类号 H03K19/003;H01L21/8238;H01L27/092;H03K19/00;H03K19/0175;H03K19/0948 主分类号 H03K19/003
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