| 摘要 |
PURPOSE:To inject carriers effectively into a quantum well fine line, and to obtain a semiconductor laser and an electronic device having high performance by forming one or more of quantum well structure constituted of a quantum well plane composed of a semiconductor on a plane and the quantum well line made up of a linear semiconductor and making the potential energy of the quantum well line lower than the quantum well plane. CONSTITUTION:The greater part of holes and electrons each injected from a P electrode 18 and an N electrode 19 are injected to a quantum well plane 14, but they flow into quantum well lines 15 because the potential energy of adjacent quantum well lines 15 is low. Since both holes and electrons arc confined in two dimensions and brought to a false one-dimensional state in the quantum well lines 15, each density of the states is concentrated into narrow energy regions, and the recombination spectra are narrowed extremely. Accordingly, all carriers effectively contribute to laser oscillation, thus acquiring a semiconductor laser having extremely small oscillation threshold currents. |
