| 摘要 |
PURPOSE:To realize structure, in which the breakdown of a P-N junction is prevented effectively, by one process by forming the P type region of an aluminum-electrode contact section in depth deeper than a P type region except the aluminum-electrode contact section. CONSTITUTION:Boron is introduced selectively in one region of an N type germanium substrate 21 as a P type impurity to form a P type light-receiving region 22. An insulating layer 23 consisting of silicon dioxide is formed on the whole surface of the N type substrate 21, and endless beltlike openings for negative electrode contacts are formed in desired regions on the P-N junction. Negative electrodes 24 consisting of aluminum are formed by using a vacuum deposition method and a photoetching method. When the process is completed and the whole is annealed for approximately five minutes or less at a temperature of approximately 340 deg.C, excellent ohmic contacts are formed in the interfaces among the electrodes 24 and the P type light-receiving region 22 while aluminum diffuses downward from the aluminum electrodes 24, and P type regions 22' deeper than the P type region 22 are formed in a part of the regions of the N type substrate 21 while penetrating through the P type light-receiving region 22. |
