| 摘要 |
PURPOSE:To obtain the contact of upper and lower interconnection layers by a fine pattern by forming a sidewall on the sidewall of a first interconnection layer formed with an antioxidation film layer, and then removing the film layer as a contact. CONSTITUTION:After a polysilicon layer 3 which becomes a a first interconnection layer is formed on an oxide film 2 of an Si substrate 1, an SiN film 4 of an antioxidation film layer is formed thereon. Then, the layers 4, 3 are selectively patterned by etching by photolithography. After the sidewall 5 of the oxide film is formed on the sidewall of the layer 3, the layer 4 on the layer 3 which becomes a contact with a second interconnection layer is selectively removed. Thereafter, a polysilicon layer 6 which becomes a second interconnection layer for connecting both polysilicon layers 3a, 4b is formed. Since the contact 7 of the layers 3, 6 is selectively formed only on the layer 3, the contact 7 with the layer 6 can be formed in a fineness corresponding to the fine pattern of the layer 3.
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