发明名称 FORMATION OF PATTERN
摘要 PURPOSE:To effectively form a fine pattern with good controllability by modifying with etching resistance an exposed layer to be modified, removing the layer to be modified except a modified layer and a protecting film, and etching a layer to be etched with the modified layer as a mask to form a pattern. CONSTITUTION:The boundary A of a layer 2 to be modified made of exposed epoxy resin is coated with an epoxy resin hardener in contact therewith, to be modified for hardening part of the resin, thereby forming a modified layer 4. This layer 4 is scarcely dissolved in an organic solvent, and has an etching resistance against an RIE. The resin is modified (hardened) in contact with the hardener. A protecting film 3 on the layer 2 limits the exposed part of the layer 2 to prevent the excess modification from above. The layer 4 formed in this manner becomes an etching mask in case of forming a wiring pattern. Accordingly, since the lateral thickness l of the modified layer is represented as the fine wire pattern width, it is important to control the thickness l of the modified layer. Thus, a pattern can be effectively formed with good controllability even as the fine pattern of 0.5mum wide or less.
申请公布号 JPS63136631(A) 申请公布日期 1988.06.08
申请号 JP19860282063 申请日期 1986.11.28
申请人 SONY CORP 发明人 TSUKIKI KAZUNORI
分类号 H01L21/28;H01L21/302;H01L21/3065;H01L21/3213;H01L21/338;H01L29/80;H01L29/812 主分类号 H01L21/28
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