| 摘要 |
PURPOSE:To prevent the crystal of a single crystalline film from being defected, warped and cracked by inclining the crystal face of a different kind single crystalline film corresponding to the same face orientation as that of the junction surface of a single crystalline substrate with respect to the junction surface of the substrate. CONSTITUTION:When a single crystalline grown film B of lattice constant (b) is epitaxially grown on a single crystalline substrate A of lattice constant (a), the crystal face orientation of the film B is inclined with respect to the substrate A thereby to reduce a distance between crystal lattices parallel to a boundary of the film B with respect to the lattice constant (a) of the substrate A smaller than the lattice constant (b) at a hetero junction boundary C to substantially largely reduce the degree of a lattice distortion. The inclining angle is set in a range of 1 to 30 degrees. For example, when the Si single crystalline substrate surface is carbonized by a chemical vapor growth method to form a thin layer of SiC single crystal and an SiC single crystalline film is epitaxially grown on the thin layer of SiC, the crystal face orientation 511 of the obtained grown film inclines 3.7 degrees with respect to the face orientation 511 of the obtained substrate surface. Thus it can prevent the grown film from being warped and cracked.
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