Bipolar transistor

摘要

A bipolar transistor in which a collector layer 35, a base layer 34 and an emitter layer 33 are transversely arranged in sequence through a monocrystal silicon layer formed on an insulation layer of a semiconductor substrate. The transistor may be fabricated by transverse diffusion in sequence from a hole in part of the silicon layer. The structure reduces parasitic capacity between base and collector, and removes p-n junction capacity between the collector and substrate to achieve high-speed operation.