| 摘要 |
PURPOSE:To obtain a semiconductor laser device, in which the increase of oscillation line width is reduced even on modulation at high speed, by forming a laser resonator by a phase conjugate mirror and a diffraction grating. CONSTITUTION:A phase conjugate mirror 17 is constituted of a nonlinear type optical medium 101 consisting of a BaTiO3 single crystal, a DFB semiconductor laser 102 generating excitation beams, a reflecting mirror 103 and a convex lens 104. Beams from another end surface 13 of a semiconductor laser 11 are changed into parallel beams by a convex lens 18, a wavelength is selected by a diffraction grating 19 and the beams are returned to the semiconductor laser 11. The phase conjugate mirror 17 and the diffraction grating 19 shape a resonator, interposing a semiconductor laser as an amplifying medium for laser oscillation. The time delay required for feedback up to the semiconductor laser 11 from the phase conjugate mirror 17 is 67ps and response is enabled up to the modulation of approximately several Gb/s.
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