| 摘要 |
<p>A thin-film transistor comprising an insulating substrate (1); an opaque metal gate electrode (2) disposed on a portion of said insulating substrate (1); a gate insulating layer (3) disposed on said insulating substrate (1) including said gate electrode (2); an a-Si semiconductor film (4) disposed on the portion of said gate insulating layer (3), said a-Si semiconductor film (4) having been formed to attain self-alignment with respect to said gate electrode (2); a-Si contact films (6, 7) constituting source and drain regions, respectively, with a gap therebetween disposed on said a-Si semiconductor film (4), the outer end of each of said contact films (6, 7) being formed to attain self-alignment with respect to said gate electrode (2); source and drain electrodes (8, 9), respectively, disposed on said source and drain regions (6, 7), the thickness of each of said a-Si semiconductor film (4) and a-Si contact films (6, 7) being 100 ANGSTROM or more and the total amount of thicknesses thereof being 1,000 ANGSTROM or less. A protective insulating film (5) can further be positioned between the a-Si semiconductor film (4) and each of said contact films (6,7).</p> |
